IGBT

SiC SBDs are small semi-conductor devices or one-way switches that are widely used in power conversion systems that rely heavily on the characteristics of silicon carbide – in that it is highly thermally conductive, has an extremely low coefficient for thermal expansion and is also highly resistant to thermal shock. In general, silicon carbide SBDs are considered to be significantly more efficient than standard diodes, being able to operate at high current density with a low forward voltage drop that result in less wasted energy.

The downside of silicon carbide diodes is that the production process has traditionally been complicated and relatively costly but through the research collaboration that Quest have established with QMF, new patented processes are now available that dramatically speed up and reduce the cost of the process. Incorporating production steps that are standard procedure in the manufacture of SiC wafers has revolutionized the design of these components and also allows customer specifications in regard to forward voltage and current rating to be facilitated in a timely and cost-effective manner. Low fabrication time and reduced costs all results in lower prices for the customers and the product will be in high demand particularly in the production of solar inverters, motor drives, electric car chargers and other users of uninterruptable power supplies.