Semefab enters Power Semiconductor Market with HV SiC Schottky Diodes
Managing Director Allan James announces the imminent availability of QMF211 650V/20A and QMF213 1200V/20A SiC Schottky Diodes. 1.7kV and higher voltage capabilities are due to follow. The development has been carried out in collaboration with Queensland Microtechnology Facility, Griffith University in Nathan, Brisbane, Australia.
‘These are the first of several Power switching technologies that Semefab has on its 2020–2022 roadmap including HV CIGBT and HV TCIGBT devices’. Power and MEMS will be the mainstay of our future activities feeding the Power Electronics Machines and Drives, IOT sensing and Low carbon emission agendas.’